Optical investigation of electrical spin injection into semiconductors

Spin Injection into Semiconductors

S 713 FRIDAY AFTERNOON, 8 NOVEMBER 2013 PLAZA BALLROOM F, 1:30 TO 4:30 Session HB SPIN INJECTION INTO SEMICONDUCTORS Georg Schmidt, Chair

Spin Injection into Amorphous Semiconductors

Optical investigation of electrical spin injection into an inverted two-dimensional electron gas structure

We report on electrical spin injection from (Ga,Mn)As into a high-mobility two-dimensional electron gas confined at an (Al,Ga)As/GaAs interface. Besides standard nonlocal electrical detection, we use a magneto-optical approach which provides cross-sectional images of the spin accumulation at the cleaved edge of the sample, yielding spin decay lengths on the order of 2 μm. In some cases we find ...

Towards electrical spin injection into LaAlO3-SrTiO3.

Future spintronics devices will be built from elemental blocks allowing the electrical injection, propagation, manipulation and detection of spin-based information. Owing to their remarkable multi-functional and strongly correlated character, oxide materials already provide such building blocks for charge-based devices such as ferroelectric field-effect transistors (FETs), as well as for spin-b...

Electrical spin injection into high mobility 2D systems.

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would re...